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| (R) STPS20150CT/CG/CR/CFP HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj VF (max) 2 x 10 A 150 V 175C 0.75 V K A2 K K FEATURES AND BENEFITS s A2 A1 s s s HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED K A1 A2 D2PAK STPS20150CG I2PAK STPS20150CR DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. A2 A1 K K A1 A2 TO-220AB STPS20150CT TO-220FPAB STPS20150CFP ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 TO-220AB D2PAK / I2PAK TO-220FPAB IFSM PARM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 155C Tc = 135C Per diode Per device Value 150 30 10 20 180 6700 - 65 to + 175 175 10000 A W C C V/s Unit V A A tp = 10 ms sinusoidal tp = 1s Tj = 25C July 2003 - Ed: 6D 1/7 STPS20150CT/CG/CR/CFP THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter TO-220AB / D PAK / I PAK TO-220FPAB TO-220AB / D PAK / I PAK TO-220FPAB Rth(c) TO-220AB / D PAK / I PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% 2 2 2 2 2 2 Value Per diode Total Coupling 2.2 4.5 1.3 3.5 0.3 2.5 Unit C/W Min. Typ. Max. 5.0 5.0 0.92 Unit A mA V VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.79 0.69 0.75 1 0.86 To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS) 2/7 STPS20150CT/CG/CR/CFP Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(AV)(W) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(AV)(A) 12 = 0.05 = 0.1 = 0.2 = 0.5 11 10 9 Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK) Rth(j-a)=Rth(j-c) (TO-220FPAB) =1 8 7 6 5 4 Rth(j-a)=15C/W T 3 2 T IF(AV)(A) =tp/T 10 11 tp 12 1 0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220AB, IPAK and DPAK IM(A) 150 TO-220AB, I PAK and D PAK 2 2 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220FPAB IM(A) 100 TO-220FPAB 90 125 80 70 TC=50C 100 60 50 TC=50C 75 TC=75C 40 30 TC=75C 50 IM TC=125C t 25 =0.5 20 10 0 IM t TC=125C t(s) 1.E-02 1.E-01 1.E+00 =0.5 t(s) 1.E-02 1.E-01 1.E+00 0 1.E-03 1.E-03 3/7 STPS20150CT/CG/CR/CFP Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration. TO-220AB, IPAK and DPAK Zth(j-c)/Rth(j-c) 1.0 TO-220AB, I PAK and D PAK 2 2 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. TO-220FPAB Zth(j-c)/Rth(j-c) 1.0 TO-220FPAB 0.9 0.8 0.7 = 0.5 0.9 0.8 0.7 0.6 0.5 = 0.2 = 0.1 = 0.5 0.6 0.5 0.4 0.3 0.2 Single pulse 0.4 T 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 0.3 0.2 = 0.2 = 0.1 T tp(s) =tp/T tp 0.1 Single pulse tp(s) 1.E-02 1.E-01 =tp/T 1.E+00 tp 1.E+01 0.0 1.E-03 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 1000 IR(A) 1E+5 Tj=175C F=1MHz Tj=25C 1E+4 Tj=150C 1E+3 Tj=125C 1E+2 Tj=100C 100 1E+1 1E+0 Tj=25C VR(V) 1E-1 0 25 50 75 100 125 150 VR(V) 10 1 2 5 10 20 50 100 200 Fig. 8: Forward voltage drop versus forward current (per diode). IFM(A) 100.0 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, Cu = 35m) (STPS20150CG only). Rth(j-a)(C/W) 80 70 Tj=125C (typical values) 60 50 10.0 Tj=125C 40 30 20 1.0 Tj=25C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 S(cm) 0 0 5 10 15 20 25 30 35 40 4/7 STPS20150CT/CG/CR/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Typ. Max. Min. 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 1.40 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 Inches Typ. Max. 0.181 0.106 0.009 0.037 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 8 A A1 A2 D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R B B2 C C2 D E G L L2 L3 R V2 0.049 0.055 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 5/7 STPS20150CT/CG/CR/CFP PACKAGE MECHANICAL DATA TO-220AB REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 c c2 D L1 b2 L b1 b e 6/7 A1 D e E L c L1 L2 STPS20150CT/CG/CR/CFP PACKAGE MECHANICAL DATA TO-220FPAB DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 REF. A H B Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. OTHER INFORMATION Ordering type STPS20150CT STPS20150CG STPS20150CG-TR STPS20150CR STPS20150CFP s Marking STPS20150CT STPS20150CG STPS20150CG STPS20150CR Package TO-220AB D2PAK D2PAK I PAK 2 Weight 2.20 g 1.48 g 1.48 g 1.49 g 2.0 g Base qty 50 50 1000 50 50 Delivery mode Tube Tube Tape & Reel Tube Tube STPS20150CFP TO-220FPAB EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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